Evaluation Board for the ISL70040SEH and ISL70024SEH (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH...
The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH...
The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low-side GaN driver and the ISL73024SEH 200V GaN FET. The...
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